Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon Technologiesonsemi
Series
HEXFET®PowerTrench®UniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
100 V150 V500 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)28A (Tc)92A (Tc)97A (Tc)
Rds On (Max) @ Id, Vgs
9mOhm @ 58A, 10V11mOhm @ 92A, 10V155mOhm @ 14A, 10V200mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 150µA4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V85 nC @ 10 V105 nC @ 10 V120 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
4310 pF @ 25 V4510 pF @ 75 V4820 pF @ 50 V5140 pF @ 25 V
Power Dissipation (Max)
230W (Tc)234W (Tc)270W (Tc)310W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-220ABTO-263 (D2PAK)TO-3PN
Package / Case
TO-220-3TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-3P-3, SC-65-3
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRFB4410ZPBF
MOSFET N-CH 100V 97A TO220AB
Infineon Technologies
7,206
In Stock
1 : ¥10.67000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
97A (Tc)
10V
9mOhm @ 58A, 10V
4V @ 150µA
120 nC @ 10 V
±20V
4820 pF @ 50 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-3P-3,TO-247-3
FDA24N50F
MOSFET N-CH 500V 24A TO3PN
onsemi
338
In Stock
1 : ¥35.06000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
24A (Tc)
10V
200mOhm @ 12A, 10V
5V @ 250µA
85 nC @ 10 V
±30V
4310 pF @ 25 V
-
270W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
TO-263
FDB110N15A
MOSFET N-CH 150V 92A D2PAK
onsemi
3,220
In Stock
1 : ¥42.44000
Cut Tape (CT)
800 : ¥25.63728
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
92A (Tc)
10V
11mOhm @ 92A, 10V
4V @ 250µA
61 nC @ 10 V
±20V
4510 pF @ 75 V
-
234W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-3P-3,TO-247-3
FDA28N50
MOSFET N-CH 500V 28A TO3PN
onsemi
0
In Stock
Check Lead Time
1 : ¥38.91000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
28A (Tc)
10V
155mOhm @ 14A, 10V
5V @ 250µA
105 nC @ 10 V
±30V
5140 pF @ 25 V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.