Single FETs, MOSFETs

Results: 6
Manufacturer
EPCPanjit International Inc.
Series
-eGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V60 V100 V150 V200 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)48A (Ta)48A (Tc)90A (Ta)101A (Ta)102A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V5V
Rds On (Max) @ Id, Vgs
1.1mOhm @ 50A, 5V1.8mOhm @ 50A, 5V3.1mOhm @ 32A, 5V3.8mOhm @ 25A, 5V6mOhm @ 15A, 5V4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 14mA2.5V @ 250µA2.5V @ 28mA2.5V @ 5mA2.5V @ 7mA2.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
1.1 nC @ 4.5 V13.8 nC @ 5 V16.3 nC @ 5 V23 nC @ 5 V24 nC @ 5 V33 nC @ 5 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
51 pF @ 25 V2103 pF @ 75 V2366 pF @ 50 V3195 pF @ 100 V3200 pF @ 50 V4523 pF @ 20 V
Power Dissipation (Max)
500mW (Ta)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
7-QFN (3x5)DieSOT-23
Package / Case
7-PowerWQFNDieTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
6Results

Showing
of 6
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2306ENGRT
EPC2306ENGRT
TRANS GAN 100V .0038OHM3X5MM QFN
EPC
5,875
In Stock
1 : ¥43.92000
Cut Tape (CT)
3,000 : ¥21.39311
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
48A (Ta)
5V
3.8mOhm @ 25A, 5V
2.5V @ 7mA
16.3 nC @ 5 V
+6V, -4V
2366 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
EPC2066
EPC2066
TRANSISTOR GAN 40V .001OHM
EPC
7,005
In Stock
1 : ¥49.34000
Cut Tape (CT)
1,000 : ¥27.98517
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
40 V
90A (Ta)
5V
1.1mOhm @ 50A, 5V
2.5V @ 28mA
33 nC @ 5 V
+6V, -4V
4523 pF @ 20 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2308ENGRT
EPC2308ENGRT
TRANS GAN 150V .006OHM 3X5PQFN
EPC
50,667
In Stock
1 : ¥51.80000
Cut Tape (CT)
3,000 : ¥27.51521
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
150 V
48A (Tc)
5V
6mOhm @ 15A, 5V
2.5V @ 5mA
13.8 nC @ 5 V
+6V, -4V
2103 pF @ 75 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
EPC2302
EPC2302
TRANS GAN 100V DIE .0018OHM
EPC
67,357
In Stock
1 : ¥54.27000
Cut Tape (CT)
3,000 : ¥30.13009
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
101A (Ta)
5V
1.8mOhm @ 50A, 5V
2.5V @ 14mA
23 nC @ 5 V
+6V, -4V
3200 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
EPC2304ENGRT
EPC2304ENGRT
TRANS GAN 200V .005OHM 3X5PQFN
EPC
21,866
In Stock
1 : ¥69.04000
Cut Tape (CT)
3,000 : ¥36.71239
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
102A (Ta)
5V
3.1mOhm @ 32A, 5V
2.5V @ 8mA
24 nC @ 5 V
+6V, -4V
3195 pF @ 100 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
14,450
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.60649
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
2.5V, 10V
4Ohm @ 500mA, 10V
2.5V @ 250µA
1.1 nC @ 4.5 V
±20V
51 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
of 6

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.