Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.onsemiTexas Instruments
Series
-NexFET™TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
25 V30 V100 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)21A (Ta), 60A (Tc)75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 24A, 8V15mOhm @ 25A, 10V65mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA2.8V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
8.4 nC @ 4.5 V30 nC @ 10 V90 nC @ 10 V
Vgs (Max)
+10V, -8V±20V
Input Capacitance (Ciss) (Max) @ Vds
690 pF @ 15 V1300 pF @ 12.5 V4900 pF @ 25 V
Power Dissipation (Max)
3W (Ta)300W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-VSON-CLIP (3.3x3.3)D2PAKSOT-223-4
Package / Case
8-PowerTDFNTO-261-4, TO-261AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT223-3L
NDT452AP
MOSFET P-CH 30V 5A SOT-223-4
onsemi
8,755
In Stock
4,000
Factory
1 : ¥7.63000
Cut Tape (CT)
4,000 : ¥3.14642
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5A (Ta)
4.5V, 10V
65mOhm @ 5A, 10V
2.8V @ 250µA
30 nC @ 10 V
±20V
690 pF @ 15 V
-
3W (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
CSD16323Q3
CSD16323Q3
MOSFET N-CH 25V 21A/60A 8VSON
Texas Instruments
6,572
In Stock
1 : ¥9.19000
Cut Tape (CT)
2,500 : ¥3.81453
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
21A (Ta), 60A (Tc)
3V, 8V
4.5mOhm @ 24A, 8V
1.4V @ 250µA
8.4 nC @ 4.5 V
+10V, -8V
1300 pF @ 12.5 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
D2PAK SOT404
PSMN015-100B,118
MOSFET N-CH 100V 75A D2PAK
Nexperia USA Inc.
5,704
In Stock
1 : ¥22.33000
Cut Tape (CT)
800 : ¥7.59339
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
100 V
75A (Tc)
10V
15mOhm @ 25A, 10V
4V @ 1mA
90 nC @ 10 V
±20V
4900 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.