Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF530NPBF MOSFET N-CH 100V 17A TO220AB Infineon Technologies	36,222 In Stock	1 : ¥7.47000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	17A (Tc)	10V	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	920 pF @ 25 V	-	70W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF530PBF MOSFET N-CH 100V 14A TO220AB Vishay Siliconix	8,596 In Stock	1 : ¥11.08000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	160mOhm @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	670 pF @ 25 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIRA18ADP-T1-GE3 MOSFET N-CH 30V 30.6A PPAK SO-8 Vishay Siliconix	11,752 In Stock	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥1.13744 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	30.6A (Tc)	4.5V, 10V	8.7mOhm @ 10A, 10V	2.4V @ 250µA	21.5 nC @ 10 V	+20V, -16V	1000 pF @ 15 V	-	14.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IRFZ24NPBF MOSFET N-CH 55V 17A TO220AB Infineon Technologies	8,404 In Stock	1 : ¥5.66000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	17A (Tc)	10V	70mOhm @ 10A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	370 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF520PBF MOSFET N-CH 100V 9.2A TO220AB Vishay Siliconix	3,331 In Stock	1 : ¥9.28000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	9.2A (Tc)	10V	270mOhm @ 5.5A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	60W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9520PBF MOSFET P-CH 100V 6.8A TO220AB Vishay Siliconix	8,621 In Stock	1 : ¥10.18000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	6.8A (Tc)	10V	600mOhm @ 4.1A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	60W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.