Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon Technologiesonsemi
Series
OptiMOS™OptiMOS™ 6OptiMOS™-5PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V150 V200 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Ta), 9.4A (Tc)7.7A (Ta), 31A (Tc)88A (Tc)90A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V8V, 10V10V
Rds On (Max) @ Id, Vgs
4mOhm @ 50A, 10V6.2mOhm @ 45A, 10V10.7mOhm @ 88A, 10V23mOhm @ 10A, 10V134mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id
3.3V @ 13µA3.8V @ 59µA3.8V @ 90µA4V @ 250µA4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
5.9 nC @ 10 V9.3 nC @ 10 V36 nC @ 10 V78 nC @ 10 V87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
345 pF @ 75 V690 pF @ 50 V3275 pF @ 50 V5200 pF @ 50 V7100 pF @ 100 V
Power Dissipation (Max)
2.3W (Ta), 26W (Tc)3W (Ta), 48W (Tc)115W (Tc)167W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-MLP (3.3x3.3)PG-TDSON-8-34PG-TO263-3PG-TSDSON-8 FL
Package / Case
8-PowerTDFN8-PowerWDFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
13,320
In Stock
1 : ¥9.61000
Cut Tape (CT)
5,000 : ¥3.77376
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
7.7A (Ta), 31A (Tc)
8V, 10V
23mOhm @ 10A, 10V
3.3V @ 13µA
9.3 nC @ 10 V
±20V
690 pF @ 50 V
-
3W (Ta), 48W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TSDSON-8 FL
8-PowerTDFN
8 POWER WDFN
FDMC86244
MOSFET N-CH 150V 2.8A/9.4A 8MLP
onsemi
8,215
In Stock
18,000
Factory
1 : ¥10.02000
Cut Tape (CT)
3,000 : ¥4.15371
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
2.8A (Ta), 9.4A (Tc)
6V, 10V
134mOhm @ 2.8A, 10V
4V @ 250µA
5.9 nC @ 10 V
±20V
345 pF @ 75 V
-
2.3W (Ta), 26W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
PG-TDSON-8-34
IAUC90N10S5N062ATMA1
MOSFET N-CH 100V 90A TDSON-8-34
Infineon Technologies
7,032
In Stock
1 : ¥17.57000
Cut Tape (CT)
5,000 : ¥7.62223
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
90A (Tc)
6V, 10V
6.2mOhm @ 45A, 10V
3.8V @ 59µA
36 nC @ 10 V
±20V
3275 pF @ 50 V
-
115W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
PG-TDSON-8-34
IAUC100N10S5N040ATMA1
MOSFET N-CH 100V 100A 8TDSON-34
Infineon Technologies
17,971
In Stock
1 : ¥21.51000
Cut Tape (CT)
5,000 : ¥9.33329
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Tc)
6V, 10V
4mOhm @ 50A, 10V
3.8V @ 90µA
78 nC @ 10 V
±20V
5200 pF @ 50 V
-
167W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB107N20N3GATMA1
MOSFET N-CH 200V 88A D2PAK
Infineon Technologies
4,896
In Stock
1 : ¥59.68000
Cut Tape (CT)
1,000 : ¥33.83402
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
88A (Tc)
10V
10.7mOhm @ 88A, 10V
4V @ 270µA
87 nC @ 10 V
±20V
7100 pF @ 100 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.