FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

CCB021M12FM3 SIC 6N-CH 1200V 51A MODULE Wolfspeed, Inc.	30 In Stock	1 : ¥1,907.47000 Tray	WolfPACK™	Tray	Active	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	-	1200V (1.2kV)	51A	27.9mOhm @ 30A, 15V	3.6V @ 17.7mA	162nC @ 15V	4900pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
CAB450M12XM3 SIC 2N-CH 1200V 450A MODULE Wolfspeed, Inc.	262 In Stock	1 : ¥7,037.12000 Box	-	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	450A	3.7mOhm @ 450A, 15V	3.6V @ 132mA	1330nC @ 15V	38000pF @ 800V	850W	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
CAB011M12FM3 SIC 2N-CH 1200V 105A MODULE Wolfspeed, Inc.	0 In Stock Check Lead Time	1 : ¥1,441.23000 Tray	WolfPACK™	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	105A	14mOhm @ 100A, 15V	3.6V @ 35mA	324nC @ 15V	10300pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
CAB400M12XM3 MOSFET 2 N-CH 1200V MODULE Wolfspeed, Inc.	0 In Stock Check Lead Time	1 : ¥5,722.64000 Box	-	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Dual)	-	1200V (1.2kV)	395A (Tc)	5.3mOhm @ 400A, 15V	3.6V @ 92mA	908nC @ 15V	2450pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
WAS310M17BM3 SIC 1700V 310A Wolfspeed, Inc.	5 In Stock	1 : ¥10,036.57000 Box	-	Box	Active	Silicon Carbide (SiC)	-	-	1700V (1.7kV)	310A	-	-	-	-	-	-	Chassis Mount	Module	-

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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.