Single Bipolar Transistors

Results: 5
Manufacturer
Fairchild Semiconductoronsemi
Packaging
BulkCut Tape (CT)Tape & Box (TB)Tube
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
150 mA1 A3 A
Voltage - Collector Emitter Breakdown (Max)
50 V60 V160 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA1V @ 300mA, 3A1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)1µA (ICBO)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA, 5V120 @ 2mA, 6V160 @ 200mA, 5V200 @ 2mA, 6V
Power - Max
400 mW900 mW30 W
Frequency - Transition
3MHz50MHz80MHz100MHz
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-226-3, TO-92-3 Long Body, Formed Leads
Supplier Device Package
TO-220-3TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3 Formed Leads
KSA1015YTA
TRANS PNP 50V 0.15A TO92-3
onsemi
2,823
In Stock
4,000
Factory
1 : ¥3.20000
Cut Tape (CT)
2,000 : ¥0.70206
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
PNP
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
400 mW
80MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-226-3, TO-92-3 Long Body (Formed Leads)
KSA1013YTA
TRANS PNP 160V 1A TO92-3
onsemi
7,668
In Stock
1 : ¥3.53000
Cut Tape (CT)
2,000 : ¥1.17536
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
PNP
1 A
160 V
1.5V @ 50mA, 500mA
1µA (ICBO)
160 @ 200mA, 5V
900 mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body, Formed Leads
TO-92-3
J113RL1
KSA1015GRTA
TRANS PNP 50V 0.15A TO92-3
Fairchild Semiconductor
13,320
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
PNP
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
400 mW
80MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-220-3
KSD880YTU
TRANS NPN 60V 3A TO220-3
onsemi
573
In Stock
1 : ¥7.06000
Tube
-
Tube
Active
NPN
3 A
60 V
1V @ 300mA, 3A
100µA (ICBO)
100 @ 500mA, 5V
30 W
3MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-92-3(StandardBody),TO-226_straightlead
KSC2383YTA
TRANS NPN 160V 1A TO92-3
onsemi
0
In Stock
Check Lead Time
1 : ¥3.86000
Cut Tape (CT)
2,000 : ¥1.04983
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
NPN
1 A
160 V
1.5V @ 50mA, 500mA
1µA (ICBO)
160 @ 200mA, 5V
900 mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body, Formed Leads
TO-92-3
Showing
of 5

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.