Single Bipolar Transistors

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Series
-BCP56T
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Collector (Ic) (Max)
200 mA1 A
Voltage - Collector Emitter Breakdown (Max)
40 V80 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
50nA (ICBO)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V100 @ 150mA, 2V
Power - Max
300 mW600 mW
Frequency - Transition
100MHz300MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Supplier Device Package
SOT-223SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-23-3
MMBT3904-7-F
TRANS NPN 40V 0.2A SOT23-3
Diodes Incorporated
4,340,210
In Stock
1 : ¥0.99000
Cut Tape (CT)
3,000 : ¥0.17309
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
300 mW
300MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SOT223
BCP56-16TX
TRANS NPN 80V 1A SOT223
Nexperia USA Inc.
4,844
In Stock
1 : ¥3.78000
Cut Tape (CT)
1,000 : ¥0.80087
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
600 mW
100MHz
150°C (TJ)
-
-
Surface Mount
TO-261-4, TO-261AA
SOT-223
Showing
of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.