Single FETs, MOSFETs

Results: 12
Manufacturer
GeneSiC SemiconductorInfineon TechnologiesLittelfuse Inc.Microchip TechnologyVishay Siliconix
Series
-EG2R™G3R™LoRing™OptiMOS™Polar P3™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
250 V800 V1700 V2000 V2500 V3300 V4700 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)2A (Tc)5A (Tc)8A (Tc)9A (Tc)11A (Tc)21A (Tc)25A (Tc)35A41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V15V20V
Rds On (Max) @ Id, Vgs
60mOhm @ 25A, 10V105mOhm @ 30A, 20V156mOhm @ 20A, 20V208mOhm @ 12A, 15V450mOhm @ 5.5A, 10V520mOhm @ 5A, 20V585mOhm @ 4A, 15V1.2Ohm @ 2A, 20V8.8Ohm @ 2.5A, 10V20Ohm @ 1A, 10V40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.7V @ 2mA2.7V @ 5mA2.97V @ 1mA2.97V @ 3mA3.5V @ 2mA4V @ 250µA4V @ 90µA5V @ 1mA5.5V @ 500µA6V @ 250µA-
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 20 V18 nC @ 15 V21 nC @ 20 V23.5 nC @ 10 V29 nC @ 10 V37 nC @ 20 V42 nC @ 10 V51 nC @ 15 V55 nC @ 20 V145 nC @ 20 V180 nC @ 10 V200 nC @ 10 V
Vgs (Max)
±15V+20V, -5V±20V+23V, -10V+25V, -10V±30V
Input Capacitance (Ciss) (Max) @ Vds
111 pF @ 1000 V238 pF @ 1000 V454 pF @ 1000 V579 pF @ 2400 V646 pF @ 25 V804 pF @ 100 V1272 pF @ 1000 V2350 pF @ 100 V3462 pF @ 2400 V3706 pF @ 1000 V6860 pF @ 25 V8560 pF @ 25 V
Power Dissipation (Max)
44W (Tc)74W (Tc)78W (Tc)88W (Tc)125W (Tc)131W (Tc)175W (Tc)220W (Tc)381W (Tc)960W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
ISOPLUSi5-Pak™PG-TDSON-8-1TO-220ABTO-247-3TO-247-4TO-247HVTO-263-7TO-264 (IXTK)
Package / Case
8-PowerTDFNISOPLUSi5-PAK™TO-220-3TO-247-3TO-247-3 VariantTO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CATO-264-3, TO-264AA
Stocking Options
Environmental Options
Media
Marketplace Product
12Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TDSON-8-1
BSC600N25NS3GATMA1
MOSFET N-CH 250V 25A TDSON-8-1
Infineon Technologies
7,450
In Stock
1 : ¥27.42000
Cut Tape (CT)
5,000 : ¥12.78836
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
25A (Tc)
10V
60mOhm @ 25A, 10V
4V @ 90µA
29 nC @ 10 V
±20V
2350 pF @ 100 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TO-247-3
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
8,271
In Stock
1 : ¥44.66000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
5.5V @ 500µA
11 nC @ 20 V
+25V, -10V
111 pF @ 1000 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
GeneSiC Semiconductor
2,677
In Stock
1 : ¥59.19000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
±15V
454 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R160MT17D
SIC MOSFET N-CH 21A TO247-3
GeneSiC Semiconductor
606
In Stock
1 : ¥100.48000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
21A (Tc)
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
51 nC @ 15 V
±15V
1272 pF @ 1000 V
-
175W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-4
MSC400SMA330B4
MOSFET SIC 3300 V 400 MOHM TO-24
Microchip Technology
506
In Stock
1 : ¥263.61000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
11A (Tc)
20V
520mOhm @ 5A, 20V
2.97V @ 1mA
37 nC @ 20 V
+23V, -10V
579 pF @ 2400 V
-
131W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
TO-247-4
MSC080SMA330B4
MOSFET SIC 3300 V 80 MOHM TO-247
Microchip Technology
41
In Stock
1 : ¥1,133.41000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
41A (Tc)
20V
105mOhm @ 30A, 20V
2.97V @ 3mA
55 nC @ 20 V
+23V, -10V
3462 pF @ 2400 V
-
381W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
G2R1000MT33J-TR
G2R1000MT33J-TR
3300V 1000M TO-263-7 G2R SIC MOS
GeneSiC Semiconductor
697
In Stock
1 : ¥153.44000
Cut Tape (CT)
800 : ¥116.82164
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
3300 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
3.5V @ 2mA
21 nC @ 20 V
+20V, -5V
238 pF @ 1000 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-264
IXTK5N250
MOSFET N-CH 2500V 5A TO264
Littelfuse Inc.
382
In Stock
825
Factory
1 : ¥545.93000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
2500 V
5A (Tc)
10V
8.8Ohm @ 2.5A, 10V
5V @ 1mA
200 nC @ 10 V
±30V
8560 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
TO-220AB
SIHP11N80AE-GE3
MOSFET N-CH 800V 8A TO220AB
Vishay Siliconix
841
In Stock
1 : ¥16.01000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
8A (Tc)
10V
450mOhm @ 5.5A, 10V
4V @ 250µA
42 nC @ 10 V
±30V
804 pF @ 100 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
GA20JT12-263
G2R120MT33J
SIC MOSFET N-CH TO263-7
GeneSiC Semiconductor
429
In Stock
1 : ¥886.87000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
35A
20V
156mOhm @ 20A, 20V
-
145 nC @ 20 V
+25V, -10V
3706 pF @ 1000 V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
ISOPLUS i5
IXTL2N470
MOSFET N-CH 4700V 2A I5PAK
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥903.21000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
4700 V
2A (Tc)
10V
20Ohm @ 1A, 10V
6V @ 250µA
180 nC @ 10 V
±20V
6860 pF @ 25 V
-
220W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUSi5-Pak™
ISOPLUSi5-PAK™
TO 247 HV EP
IXTH1N200P3HV
MOSFET N-CH 2000V 1A TO247HV
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥74.38000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
2000 V
1A (Tc)
10V
40Ohm @ 500mA, 10V
4V @ 250µA
23.5 nC @ 10 V
±20V
646 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247HV
TO-247-3 Variant
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.