Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesMicrochip Technology
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V120 V300 V
Current - Continuous Drain (Id) @ 25°C
85mA (Tj)8.6A (Ta), 44A (Tc)14.9A (Ta), 90A (Tc)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V6V, 10V10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 90A, 10V6mOhm @ 50A, 10V19mOhm @ 39A, 10V25Ohm @ 120mA, 4.5V
Vgs(th) (Max) @ Id
2.4V @ 1mA2.8V @ 95µA3.5V @ 90µA4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V68 nC @ 10 V71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V2300 pF @ 60 V4900 pF @ 50 V5200 pF @ 30 V
Power Dissipation (Max)
360mW (Tc)3W (Ta), 167W (Tc)69W (Tc)125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TDSON-8-1PG-TO252-3TO-236AB (SOT23)
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT23 PKG
TN2130K1-G
MOSFET N-CH 300V 85MA TO236AB
Microchip Technology
8,590
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥2.87343
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
300 V
85mA (Tj)
4.5V
25Ohm @ 120mA, 4.5V
2.4V @ 1mA
-
±20V
50 pF @ 25 V
-
360mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
PG-TDSON-8-1
BSC190N12NS3GATMA1
MOSFET N-CH 120V 8.6A/44A TDSON
Infineon Technologies
21,132
In Stock
1 : ¥11.33000
Cut Tape (CT)
5,000 : ¥4.47671
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
8.6A (Ta), 44A (Tc)
10V
19mOhm @ 39A, 10V
4V @ 42µA
34 nC @ 10 V
±20V
2300 pF @ 60 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
PG-TDSON-8-1
BSC060N10NS3GATMA1
MOSFET N-CH 100V 14.9/90A 8TDSON
Infineon Technologies
12,797
In Stock
1 : ¥20.28000
Cut Tape (CT)
5,000 : ¥8.81569
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
14.9A (Ta), 90A (Tc)
6V, 10V
6mOhm @ 50A, 10V
3.5V @ 90µA
68 nC @ 10 V
±20V
4900 pF @ 50 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TO252-3
IPD025N06NATMA1
MOSFET N-CH 60V 90A TO252-3
Infineon Technologies
10,204
In Stock
1 : ¥21.02000
Cut Tape (CT)
2,500 : ¥9.49201
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
90A (Tc)
6V, 10V
2.5mOhm @ 90A, 10V
2.8V @ 95µA
71 nC @ 10 V
±20V
5200 pF @ 30 V
-
3W (Ta), 167W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.