Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

EPC2215 GAN TRANS 200V 8MOHM BUMPED DIE EPC	35,254 In Stock	1 : ¥52.29000 Cut Tape (CT) 2,500 : ¥27.79553 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	32A (Ta)	5V	8mOhm @ 20A, 5V	2.5V @ 6mA	17.7 nC @ 5 V	+6V, -4V	1790 pF @ 100 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
BSC0302LSATMA1 MOSFET N-CH 120V 12A/99A TDSON Infineon Technologies	9,853 In Stock	1 : ¥17.40000 Cut Tape (CT) 5,000 : ¥7.55452 Tape & Reel (TR)	OptiMOS™ 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	120 V	12A (Ta), 99A (Tc)	4.5V, 10V	8mOhm @ 50A, 10V	2.4V @ 112µA	79 nC @ 10 V	±20V	7400 pF @ 60 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.