Single FETs, MOSFETs

Results: 4
Manufacturer
Central Semiconductor CorpDiodes IncorporatedNexperia USA Inc.Toshiba Semiconductor and Storage
Series
-U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V100 V200 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)180mA (Ta)1A (Ta)33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
29mOhm @ 16.5A, 10V220mOhm @ 500mA, 10V4.5Ohm @ 100mA, 10V6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2V @ 1mA2.3V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.44 nC @ 4.5 V2.3 nC @ 4.5 V22 nC @ 10 V
Vgs (Max)
±20V20V
Input Capacitance (Ciss) (Max) @ Vds
13 pF @ 10 V60 pF @ 25 V240 pF @ 25 V2200 pF @ 100 V
Power Dissipation (Max)
200mW (Ta)260mW (Ta), 1.1W (Tc)350mW (Ta)800mW (Ta), 142W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C
Supplier Device Package
8-DSOP AdvanceSOT-23SOT-323
Package / Case
8-PowerVDFNSC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS123WQ-7-F
MOSFET N-CH 100V 170MA SOT323
Diodes Incorporated
233,820
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.46763
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
4.5V, 10V
6Ohm @ 170mA, 10V
2V @ 1mA
-
±20V
60 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
8-DSOP Advance
TPW2900ENH,L1Q
PB-F POWER MOSFET TRANSISTOR DSO
Toshiba Semiconductor and Storage
4,998
In Stock
1 : ¥29.39000
Cut Tape (CT)
5,000 : ¥9.88255
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
33A (Tc)
10V
29mOhm @ 16.5A, 10V
4V @ 1mA
22 nC @ 10 V
±20V
2200 pF @ 100 V
-
800mW (Ta), 142W (Tc)
150°C
Surface Mount
8-DSOP Advance
8-PowerVDFN
SOT-323
NX3020NAKW,115
MOSFET N-CH 30V 180MA SOT323
Nexperia USA Inc.
304,373
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26537
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
180mA (Ta)
2.5V, 10V
4.5Ohm @ 100mA, 10V
1.5V @ 250µA
0.44 nC @ 4.5 V
±20V
13 pF @ 10 V
-
260mW (Ta), 1.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
11,020
In Stock
1 : ¥5.17000
Cut Tape (CT)
3,000 : ¥1.74776
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
1A (Ta)
5V, 10V
220mOhm @ 500mA, 10V
2.3V @ 250µA
2.3 nC @ 4.5 V
20V
240 pF @ 25 V
-
350mW (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.