Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
50 V100 V
Current - Continuous Drain (Id) @ 25°C
180mA (Ta)190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V10V
Rds On (Max) @ Id, Vgs
7.5Ohm @ 100mA, 10V10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id
2V @ 1mA2.1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 25 V40 pF @ 10 V
Power Dissipation (Max)
350mW (Ta), 1.14W (Tc)830mW (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS84AK,215
MOSFET P-CH 50V 180MA TO236AB
Nexperia USA Inc.
663,678
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.30406
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
180mA (Ta)
10V
7.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 5 V
±20V
36 pF @ 25 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-236AB
BST82,215
MOSFET N-CH 100V 190MA TO236AB
Nexperia USA Inc.
29,429
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.81844
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
190mA (Ta)
5V
10Ohm @ 150mA, 5V
2V @ 1mA
-
±20V
40 pF @ 10 V
-
830mW (Tc)
-65°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.