Single FETs, MOSFETs

Results: 2
Manufacturer
Good-Ark SemiconductorVishay Siliconix
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V250 V
Current - Continuous Drain (Id) @ 25°C
2.7A (Tc)80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
6mOhm @ 20A, 10V3Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.1 nC @ 4.5 V14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
220 pF @ 25 V1160 pF @ 25 V
Power Dissipation (Max)
50W (Tc)54W (Tc)
Supplier Device Package
DPAKTO-252 (DPAK)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
D-PAK (TO-252AA)
IRFR9214PBF
MOSFET P-CH 250V 2.7A DPAK
Vishay Siliconix
923
In Stock
1 : ¥12.23000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
250 V
2.7A (Tc)
10V
3Ohm @ 1.7A, 10V
4V @ 250µA
14 nC @ 10 V
±20V
220 pF @ 25 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
GSFD0460
SSFD3906
MOSFET, N-CH, SINGLE, 80A, 30V,
Good-Ark Semiconductor
12,167
In Stock
1 : ¥3.28000
Cut Tape (CT)
2,500 : ¥1.15673
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
80A (Tc)
4.5V, 10V
6mOhm @ 20A, 10V
2.5V @ 250µA
11.1 nC @ 4.5 V
±20V
1160 pF @ 25 V
-
54W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.