Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes Incorporated
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
70A (Tc)135A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 20A, 10V8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2830 pF @ 15 V3775 pF @ 15 V
Power Dissipation (Max)
1.5W78W (Tc)
Supplier Device Package
PowerDI5060-8TO-252 (DPAK)
Package / Case
8-PowerTDFNTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
3,878
In Stock
1 : ¥6.65000
Cut Tape (CT)
2,500 : ¥2.52862
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
70A (Tc)
10V
8mOhm @ 20A, 10V
2.3V @ 250µA
70 nC @ 10 V
±25V
2830 pF @ 15 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMPH4015SPSQ-13
DMP34M4SPS-13
MOSFET P-CH 30V 135A PWRDI5060-8
Diodes Incorporated
4,396
In Stock
827,500
Factory
1 : ¥9.03000
Cut Tape (CT)
2,500 : ¥3.73835
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
135A (Tc)
5V, 10V
3.8mOhm @ 20A, 10V
2.6V @ 250µA
127 nC @ 10 V
±25V
3775 pF @ 15 V
-
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.