Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
-QFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Current - Continuous Drain (Id) @ 25°C
19A (Tc)22A (Tc)
Rds On (Max) @ Id, Vgs
125mOhm @ 11A, 10V200mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V61 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V1500 pF @ 25 V
Power Dissipation (Max)
3.75W (Ta), 125W (Tc)150W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-220ABTO-263 (D2PAK)
Package / Case
TO-220-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB
IRF9540PBF
MOSFET P-CH 100V 19A TO220AB
Vishay Siliconix
3,024
In Stock
1 : ¥16.99000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
19A (Tc)
10V
200mOhm @ 11A, 10V
4V @ 250µA
61 nC @ 10 V
±20V
1400 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-263
FQB22P10TM
MOSFET P-CH 100V 22A D2PAK
onsemi
0
In Stock
Check Lead Time
1 : ¥15.76000
Cut Tape (CT)
800 : ¥8.83836
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
22A (Tc)
10V
125mOhm @ 11A, 10V
4V @ 250µA
50 nC @ 10 V
±30V
1500 pF @ 25 V
-
3.75W (Ta), 125W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.