Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI4435FDY-T1-GE3 MOSFET P-CH 30V 12.6A 8SOIC Vishay Siliconix	34,086 In Stock	1 : ¥3.86000 Cut Tape (CT) 2,500 : ¥1.03815 Tape & Reel (TR)	TrenchFET® Gen III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	12.6A (Tc)	4.5V, 10V	19mOhm @ 9A, 10V	2.2V @ 250µA	42 nC @ 10 V	±20V	1500 pF @ 15 V	-	4.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI4101DY-T1-GE3 MOSFET P-CH 30V 25.7A 8SO Vishay Siliconix	8,620 In Stock	1 : ¥7.14000 Cut Tape (CT) 2,500 : ¥2.71768 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	25.7A (Tc)	4.5V, 10V	6mOhm @ 15A, 10V	2.5V @ 250µA	203 nC @ 10 V	±20V	8190 pF @ 15 V	-	6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
CSD19503KCS MOSFET N-CH 80V 100A TO220-3 Texas Instruments	127 In Stock	1 : ¥13.71000 Tube	NexFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	100A (Ta)	6V, 10V	9.2mOhm @ 60A, 10V	3.4V @ 250µA	36 nC @ 10 V	±20V	2730 pF @ 40 V	-	188W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.