Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-CoolMOS™ C7CoolSiC™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
60 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
180mA (Ta)50A (Tc)54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V10V18V
Rds On (Max) @ Id, Vgs
40mOhm @ 24.9A, 10V51mOhm @ 25A, 18V10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
2V @ 1mA4V @ 1.24mA5.7V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs
0.56 nC @ 10 V41 nC @ 18 V107 nC @ 10 V
Vgs (Max)
±20V+23V, -5V±30V
Input Capacitance (Ciss) (Max) @ Vds
24.6 pF @ 25 V1393 pF @ 400 V4340 pF @ 400 V
Power Dissipation (Max)
310mW (Ta)211W (Tc)227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-4PG-TO263-7-12SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP610DL-7
MOSFET BVDSS: 41V 60V SOT23 T&R
Diodes Incorporated
5,109
In Stock
147,000
Factory
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.30229
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
180mA (Ta)
5V
10Ohm @ 100mA, 5V
2V @ 1mA
0.56 nC @ 10 V
±30V
24.6 pF @ 25 V
-
310mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-247-4
IPZ60R040C7XKSA1
MOSFET N-CH 600V 50A TO247-4
Infineon Technologies
655
In Stock
1 : ¥68.63000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
50A (Tc)
10V
40mOhm @ 24.9A, 10V
4V @ 1.24mA
107 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4
TO-247-4
IMBG65R039M1HXTMA1
IMBG65R039M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥91.05000
Cut Tape (CT)
1,000 : ¥51.66061
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
54A (Tc)
18V
51mOhm @ 25A, 18V
5.7V @ 7.5mA
41 nC @ 18 V
+23V, -5V
1393 pF @ 400 V
-
211W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.