Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.8V, 2.7V
Rds On (Max) @ Id, Vgs
470mOhm @ 500mA, 4.5V1.7Ohm @ 200mA, 2.7V
Vgs(th) (Max) @ Id
900mV @ 100µA1V @ 1mA
Vgs (Max)
±8V±10V
Power Dissipation (Max)
350mW (Ta)400mW (Ta)
Operating Temperature
-65°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3VML1006
Package / Case
SC-101, SOT-883TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN2005K-7
MOSFET N-CH 20V 300MA SOT23-3
Diodes Incorporated
682,708
In Stock
261,000
Factory
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.57387
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
300mA (Ta)
1.8V, 2.7V
1.7Ohm @ 200mA, 2.7V
900mV @ 100µA
±10V
-
-
350mW (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
RV2C001ZPT2L
RV2C010UNT2L
MOSFET N-CH 20V 1A DFN1006-3
Rohm Semiconductor
37,758
In Stock
1 : ¥3.20000
Cut Tape (CT)
8,000 : ¥0.69652
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1A (Ta)
1.2V, 4.5V
470mOhm @ 500mA, 4.5V
1V @ 1mA
±8V
40 pF @ 10 V
-
400mW (Ta)
150°C (TJ)
Surface Mount
VML1006
SC-101, SOT-883
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.