Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V150 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta), 267A (Tc)174A (Tc)
Rds On (Max) @ Id, Vgs
1.7mOhm @ 90A, 10V4.4mOhm @ 87A, 10V
Vgs(th) (Max) @ Id
4V @ 650µA4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7630 pF @ 50 V8000 pF @ 75 V
Power Dissipation (Max)
5.1W (Ta), 291W (Tc)300W (Tc)
Mounting Type
Surface MountSurface Mount, Wettable Flank
Supplier Device Package
8-TDFNW (8.3x8.4)PG-TO263-7
Package / Case
8-PowerTDFNTO-263-7, D2PAK (6 Leads + Tab)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-7, D2Pak
IPB044N15N5ATMA1
MOSFET N-CH 150V 174A TO263-7
Infineon Technologies
1,290
In Stock
1 : ¥51.89000
Cut Tape (CT)
1,000 : ¥29.41688
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
174A (Tc)
8V, 10V
4.4mOhm @ 87A, 10V
4.6V @ 264µA
100 nC @ 10 V
±20V
8000 pF @ 75 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
8-TDFNW AS Top
NTMTSC1D6N10MCTXG
MOSFET N-CH 100V 35A/267A 8TDFNW
onsemi
4,902
In Stock
1 : ¥53.04000
Cut Tape (CT)
3,000 : ¥25.81828
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
35A (Ta), 267A (Tc)
-
1.7mOhm @ 90A, 10V
4V @ 650µA
106 nC @ 10 V
±20V
7630 pF @ 50 V
-
5.1W (Ta), 291W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-TDFNW (8.3x8.4)
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.