Single FETs, MOSFETs

Results: 5
Manufacturer
Nexperia USA Inc.onsemi
Series
-PowerTrench®QFET®TrenchMOS™UniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V150 V200 V250 V
Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)3.7A (Tc)4.4A (Ta), 22A (Tc)24A (Ta)33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V6V, 10V10V
Rds On (Max) @ Id, Vgs
45mOhm @ 10A, 5V53mOhm @ 4.4A, 10V94mOhm @ 16.5A, 10V365mOhm @ 1.2A, 10V1.4Ohm @ 1.85A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V15 nC @ 10 V32 nC @ 5 V48 nC @ 10 V63 nC @ 10 V
Vgs (Max)
±15V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 25 V549 pF @ 50 V1140 pF @ 25 V2135 pF @ 25 V3905 pF @ 75 V
Power Dissipation (Max)
710mW (Ta), 8.3W (Tc)1.36W (Ta), 62.5W (Tj)2.5W (Ta), 104W (Tc)2.5W (Ta), 45W (Tc)235W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-PQFN (5x6)DPAKTO-236ABTO-252AATO-263 (D2PAK)
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-3P-3,TO-247-3
NTD24N06LT4G
MOSFET N-CH 60V 24A DPAK
onsemi
16,040
In Stock
1 : ¥12.73000
Cut Tape (CT)
2,500 : ¥5.73468
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta)
5V
45mOhm @ 10A, 5V
2V @ 250µA
32 nC @ 5 V
±15V
1140 pF @ 25 V
-
1.36W (Ta), 62.5W (Tj)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-PQFN
FDMS86263P
MOSFET P-CH 150V 4.4A/22A 8PQFN
onsemi
4,677
In Stock
1 : ¥24.14000
Cut Tape (CT)
3,000 : ¥11.74694
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
4.4A (Ta), 22A (Tc)
6V, 10V
53mOhm @ 4.4A, 10V
4V @ 250µA
63 nC @ 10 V
±25V
3905 pF @ 75 V
-
2.5W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
TO-236AB
PMV240SPR
MOSFET P-CH 100V 1.2A TO236AB
Nexperia USA Inc.
4,516
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥1.13334
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1.2A (Ta)
-
365mOhm @ 1.2A, 10V
4V @ 250µA
15 nC @ 10 V
±25V
549 pF @ 50 V
-
710mW (Ta), 8.3W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-252AA
FQD5P20TM
MOSFET P-CH 200V 3.7A DPAK
onsemi
2,470
In Stock
5,000
Factory
1 : ¥7.64000
Cut Tape (CT)
2,500 : ¥2.88900
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.7A (Tc)
10V
1.4Ohm @ 1.85A, 10V
5V @ 250µA
13 nC @ 10 V
±30V
430 pF @ 25 V
-
2.5W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263
FDB33N25TM
MOSFET N-CH 250V 33A D2PAK
onsemi
0
In Stock
Check Lead Time
1 : ¥18.23000
Cut Tape (CT)
800 : ¥10.18868
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
235W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.