Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NVMFS2D3P04M8LT1G MV8 P INITIAL PROGRAM onsemi	2,222 In Stock 4,500 Factory	1 : ¥26.60000 Cut Tape (CT) 1,500 : ¥13.73528 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	31A (Ta), 222A (Tc)	4.5V, 10V	2.2mOhm @ 30A, 10V	2.4V @ 2.7mA	157 nC @ 10 V	±20V	5985 pF @ 20 V	-	3.8W (Ta), 205W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IPC90N04S5L3R3ATMA1 MOSFET N-CH 40V 90A 8TDSON-34 Infineon Technologies	8,788 In Stock	1 : ¥9.69000 Cut Tape (CT) 5,000 : ¥3.81702 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	40 V	90A (Tc)	4.5V, 10V	3.3mOhm @ 45A, 10V	2V @ 23µA	40 nC @ 10 V	±16V	2145 pF @ 25 V	-	62W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
NVMFS5H663NLT1G MOSFET N-CH 60V 16.2A/67A 5DFN onsemi	2,427 In Stock	1 : ¥10.18000 Cut Tape (CT) 1,500 : ¥4.46783 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	16.2A (Ta), 67A (Tc)	4.5V, 10V	7.2mOhm @ 20A, 10V	2V @ 56µA	17 nC @ 10 V	±20V	1131 pF @ 30 V	-	3.7W (Ta), 63W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.