Single FETs, MOSFETs

Results: 3
Manufacturer
Alpha & Omega Semiconductor Inc.onsemiVishay Siliconix
Series
-SuperFET® IIITrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V650 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)26A (Tc)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
40mOhm @ 20A, 10V67mOhm @ 20A, 10V75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA2.5V @ 250µA4V @ 3.9mA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V54 nC @ 10 V80 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 20 V3600 pF @ 30 V3750 pF @ 400 V
Power Dissipation (Max)
2.5W (Ta), 60W (Tc)2.5W (Tc)266W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-23-3 (TO-236)TO-247-4TO-252 (DPAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-247-4TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
26,232
In Stock
1 : ¥7.22000
Cut Tape (CT)
2,500 : ¥2.99940
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
26A (Tc)
4.5V, 10V
40mOhm @ 20A, 10V
2.4V @ 250µA
54 nC @ 10 V
±20V
3600 pF @ 30 V
-
2.5W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-23-3
SQ2319ADS-T1_BE3
MOSFET P-CH 40V 4.6A SOT23-3
Vishay Siliconix
10,812
In Stock
1 : ¥5.42000
Cut Tape (CT)
3,000 : ¥2.05833
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
4.6A (Tc)
4.5V, 10V
75mOhm @ 3A, 10V
2.5V @ 250µA
16 nC @ 10 V
±20V
620 pF @ 20 V
-
2.5W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
NVH4L080N120SC1
NTH4LN067N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
onsemi
265
In Stock
1 : ¥35.30000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
40A (Tc)
10V
67mOhm @ 20A, 10V
4V @ 3.9mA
80 nC @ 10 V
±30V
3750 pF @ 400 V
-
266W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.