Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesLittelfuse Inc.onsemiVishay Siliconix
Series
-Linear L2™OptiMOS™TrenchFET® Gen III
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
16.2A (Ta), 67A (Tc)31A (Ta), 100A (Tc)31A (Ta), 222A (Tc)90A (Tc)200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 30A, 10V3.3mOhm @ 45A, 10V3.6mOhm @ 20A, 10V7.2mOhm @ 20A, 10V11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2V @ 23µA2V @ 56µA2.3V @ 250µA2.4V @ 2.7mA4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V40 nC @ 10 V157 nC @ 10 V330 nC @ 10 V540 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
1131 pF @ 30 V2145 pF @ 25 V5985 pF @ 20 V12900 pF @ 20 V23000 pF @ 25 V
Power Dissipation (Max)
3.7W (Ta), 63W (Tc)3.8W (Ta), 205W (Tc)6.25W (Ta), 104W (Tc)62W (Tc)1040W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
5-DFN (5x6) (8-SOFL)PG-TDSON-8-34PowerPAK® SO-8TO-264 (IXTK)
Package / Case
8-PowerTDFN8-PowerTDFN, 5 LeadsPowerPAK® SO-8TO-264-3, TO-264AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SI7155DP-T1-GE3
MOSFET P-CH 40V 31A/100A PPAK
Vishay Siliconix
27,139
In Stock
1 : ¥16.34000
Cut Tape (CT)
3,000 : ¥7.37016
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
31A (Ta), 100A (Tc)
4.5V, 10V
3.6mOhm @ 20A, 10V
2.3V @ 250µA
330 nC @ 10 V
±20V
12900 pF @ 20 V
-
6.25W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
5-DFN, 8-SO Flat Lead
NVMFS2D3P04M8LT1G
MV8 P INITIAL PROGRAM
onsemi
2,222
In Stock
4,500
Factory
1 : ¥26.60000
Cut Tape (CT)
1,500 : ¥13.73528
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
31A (Ta), 222A (Tc)
4.5V, 10V
2.2mOhm @ 30A, 10V
2.4V @ 2.7mA
157 nC @ 10 V
±20V
5985 pF @ 20 V
-
3.8W (Ta), 205W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
TO-264
IXTK200N10L2
MOSFET N-CH 100V 200A TO264
Littelfuse Inc.
524
In Stock
1 : ¥306.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200A (Tc)
10V
11mOhm @ 100A, 10V
4.5V @ 3mA
540 nC @ 10 V
±20V
23000 pF @ 25 V
-
1040W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
PG-TDSON-8-34
IPC90N04S5L3R3ATMA1
MOSFET N-CH 40V 90A 8TDSON-34
Infineon Technologies
8,788
In Stock
1 : ¥9.69000
Cut Tape (CT)
5,000 : ¥3.81702
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
40 V
90A (Tc)
4.5V, 10V
3.3mOhm @ 45A, 10V
2V @ 23µA
40 nC @ 10 V
±16V
2145 pF @ 25 V
-
62W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
5-DFN, 8-SO Flat Lead
NVMFS5H663NLT1G
MOSFET N-CH 60V 16.2A/67A 5DFN
onsemi
2,427
In Stock
1 : ¥10.18000
Cut Tape (CT)
1,500 : ¥4.46783
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
16.2A (Ta), 67A (Tc)
4.5V, 10V
7.2mOhm @ 20A, 10V
2V @ 56µA
17 nC @ 10 V
±20V
1131 pF @ 30 V
-
3.7W (Ta), 63W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.