Single FETs, MOSFETs

Results: 8
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedInfineon TechnologiesNexperia USA Inc.Rohm SemiconductorToshiba Semiconductor and Storage
Series
-HEXFET®TrenchMOS™U-MOSVII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V30 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)350mA (Ta)3.5A (Ta)4A (Ta)4.2A (Ta)5A (Ta)6A (Ta)6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V1.8V, 8V2.5V, 4.5V4V, 10V4.5V
Rds On (Max) @ Id, Vgs
17.6mOhm @ 6A, 8V18mOhm @ 6.8A, 4.5V29mOhm @ 5A, 4.5V36mOhm @ 2.4A, 4.5V52mOhm @ 4.2A, 4.5V59mOhm @ 3.5A, 4.5V1.4Ohm @ 250mA, 10V1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA950mV @ 250µA1V @ 1mA1V @ 250µA1.1V @ 10µA1.1V @ 250µA1.2V @ 1mA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.68 nC @ 4.5 V6.5 nC @ 4.5 V6.8 nC @ 4.5 V10.2 nC @ 4.5 V11.05 nC @ 4.5 V15.5 nC @ 4.5 V19.5 nC @ 4.5 V
Vgs (Max)
±8V±10V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 10 V50 pF @ 15 V460 pF @ 10 V650 pF @ 25 V808 pF @ 15 V888 pF @ 10 V1400 pF @ 6 V1890 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)260mW (Ta), 830mW (Tc)510mW (Ta)1W (Ta)1W (Tc)1.2W (Ta)1.3W (Ta)1.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
EMT3F (SOT-416FL)Micro3™/SOT-23SOT-23SOT-23-3SOT-23FSOT-323TO-236ABTSMT3
Package / Case
SC-70, SOT-323SC-89, SOT-490SC-96SOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG2305UX-13
MOSFET P-CH 20V 4.2A SOT23
Diodes Incorporated
136,127
In Stock
2,340,000
Factory
1 : ¥3.12000
Cut Tape (CT)
10,000 : ¥0.40486
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
1.8V, 4.5V
52mOhm @ 4.2A, 4.5V
900mV @ 250µA
10.2 nC @ 4.5 V
±8V
808 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML6344TRPBF
MOSFET N-CH 30V 5A MICRO3/SOT23
Infineon Technologies
126,980
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.02907
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5A (Ta)
2.5V, 4.5V
29mOhm @ 5A, 4.5V
1.1V @ 10µA
6.8 nC @ 4.5 V
±12V
650 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
362,245
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥0.87864
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
6A (Ta)
1.8V, 8V
17.6mOhm @ 6A, 8V
1V @ 1mA
19.5 nC @ 4.5 V
±10V
1400 pF @ 6 V
-
1W (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SOT-323
NX3008NBKW,115
MOSFET N-CH 30V 350MA SOT323
Nexperia USA Inc.
632,360
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.33879
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
350mA (Ta)
1.8V, 4.5V
1.4Ohm @ 350mA, 4.5V
1.1V @ 250µA
0.68 nC @ 4.5 V
±8V
50 pF @ 15 V
-
260mW (Ta), 830mW (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
EMT3F
RE1E002SPTCL
MOSFET P-CH 30V 250MA EMT3F
Rohm Semiconductor
10,944
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.47644
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
250mA (Ta)
4V, 10V
1.4Ohm @ 250mA, 10V
2.5V @ 1mA
-
±20V
30 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
-
-
Surface Mount
EMT3F (SOT-416FL)
SC-89, SOT-490
TSMT3
RQ5C035BCTCL
MOSFET P-CHANNEL 20V 3.5A TSMT3
Rohm Semiconductor
20,273
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.33314
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.5A (Ta)
4.5V
59mOhm @ 3.5A, 4.5V
1.2V @ 1mA
6.5 nC @ 4.5 V
±8V
460 pF @ 10 V
-
1W (Tc)
150°C (TJ)
-
-
Surface Mount
TSMT3
SC-96
TO-236AB
PMV32UP,215
MOSFET P-CH 20V 4A TO236AB
Nexperia USA Inc.
8,565
In Stock
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥1.50122
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.8V, 4.5V
36mOhm @ 2.4A, 4.5V
950mV @ 250µA
15.5 nC @ 4.5 V
±8V
1890 pF @ 10 V
-
510mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
AS2312
AS2312
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
62,708
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37565
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
6.8A (Ta)
1.8V, 4.5V
18mOhm @ 6.8A, 4.5V
1V @ 250µA
11.05 nC @ 4.5 V
±10V
888 pF @ 10 V
-
1.2W (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.