Single FETs, MOSFETs

Results: 2
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®U-MOSVIII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
18A (Tc)45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 22.5A, 10V12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
2.3V @ 500µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
2230 pF @ 15 V3630 pF @ 25 V
Power Dissipation (Max)
700mW (Ta), 42W (Tc)6.8W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-SOIC8-TSON Advance (3.1x3.1)
Package / Case
8-PowerVDFN8-SOIC (0.154", 3.90mm Width)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
9,008
In Stock
1 : ¥9.28000
Cut Tape (CT)
5,000 : ¥3.65029
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
45A (Tc)
10V
2.2mOhm @ 22.5A, 10V
2.3V @ 500µA
34 nC @ 10 V
±20V
2230 pF @ 15 V
-
700mW (Ta), 42W (Tc)
150°C (TJ)
-
-
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
8-SOIC
SQ4425EY-T1_GE3
MOSFET P-CHANNEL 30V 18A 8SOIC
Vishay Siliconix
34,897
In Stock
1 : ¥15.27000
Cut Tape (CT)
2,500 : ¥6.87830
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
18A (Tc)
4.5V, 10V
12mOhm @ 13A, 10V
2.5V @ 250µA
50 nC @ 4.5 V
±20V
3630 pF @ 25 V
-
6.8W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.