Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V80 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)3.3A (Ta)
Rds On (Max) @ Id, Vgs
33mOhm @ 4.4A, 10V450mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 10 V23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
130 pF @ 40 V1382 pF @ 20 V
Power Dissipation (Max)
400mW (Ta), 6.25W (Tc)700mW (Ta)
Supplier Device Package
DFN1010D-3U-DFN2020-6 (Type E)
Package / Case
3-XDFN Exposed Pad6-PowerUDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
U-DFN2020-6 Type E
DMP4047LFDE-7
MOSFET P-CH 40V 3.3A 6UDFN
Diodes Incorporated
20,251
In Stock
489,000
Factory
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.43357
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
3.3A (Ta)
4.5V, 10V
33mOhm @ 4.4A, 10V
2.2V @ 250µA
23.2 nC @ 10 V
±20V
1382 pF @ 20 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
3-XFDFN Exposed Pad
PMXB360ENEAZ
MOSFET N-CH 80V 1.1A DFN1010D-3
Nexperia USA Inc.
11,522
In Stock
1 : ¥2.96000
Cut Tape (CT)
5,000 : ¥0.76634
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
1.1A (Ta)
4.5V, 10V
450mOhm @ 1.1A, 10V
2.7V @ 250µA
4.5 nC @ 10 V
±20V
130 pF @ 40 V
-
400mW (Ta), 6.25W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN1010D-3
3-XDFN Exposed Pad
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.