Single FETs, MOSFETs

Results: 3
Series
CoolMOS™CoolMOS™ C7CoolMOS™ CFD7
Drain to Source Voltage (Vdss)
600 V650 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)101A (Tc)109A (Tc)
Rds On (Max) @ Id, Vgs
17mOhm @ 58.2A, 10V18mOhm @ 58.2A, 10V19mOhm @ 58.3A, 10V
Vgs(th) (Max) @ Id
4V @ 2.91mA4V @ 2.92mA4.5V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs
215 nC @ 10 V240 nC @ 10 V251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
9890 pF @ 400 V9900 pF @ 400 V9901 pF @ 400 V
Power Dissipation (Max)
416W (Tc)446W (Tc)
Supplier Device Package
PG-TO247-3PG-TO247-3-41PG-TO247-4
Package / Case
TO-247-3TO-247-4
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
999
In Stock
1 : ¥153.03000
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N-Channel
MOSFET (Metal Oxide)
600 V
101A (Tc)
10V
18mOhm @ 58.2A, 10V
4.5V @ 2.91mA
251 nC @ 10 V
±20V
9901 pF @ 400 V
-
416W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
604
In Stock
1 : ¥160.25000
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N-Channel
MOSFET (Metal Oxide)
600 V
109A (Tc)
10V
17mOhm @ 58.2A, 10V
4V @ 2.91mA
240 nC @ 10 V
±20V
9890 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-4
IPZ65R019C7XKSA1
MOSFET N-CH 650V 75A TO247-4
Infineon Technologies
1,203
In Stock
1 : ¥160.99000
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N-Channel
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
19mOhm @ 58.3A, 10V
4V @ 2.92mA
215 nC @ 10 V
±20V
9900 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4
TO-247-4
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.