Single FETs, MOSFETs

Results: 4
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes Incorporated
Series
-AlphaSGT™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)6.2A (Ta)85A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.85mOhm @ 20A, 10V3.5mOhm @ 20A, 10V40mOhm @ 6.2A, 10V45mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA2.2V @ 250µA2.8V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.9 nC @ 4.5 V55 nC @ 10 V65 nC @ 10 V115 nC @ 10 V
Vgs (Max)
-20V±20V
Input Capacitance (Ciss) (Max) @ Vds
425 pF @ 10 V2900 pF @ 30 V3100 pF @ 15 V5940 pF @ 50 V
Power Dissipation (Max)
650mW (Ta)3.1W (Ta)6.2W (Ta), 215W (Tc)50W (Tc)
Supplier Device Package
8-DFN (5x6)8-SOICX2-DSN1010-3
Package / Case
3-XFDFN8-PowerSMD, Flat Leads8-SOIC (0.154", 3.90mm Width)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
AO4421
MOSFET P-CH 60V 6.2A 8SOIC
Alpha & Omega Semiconductor Inc.
322,918
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥2.19612
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
6.2A (Ta)
4.5V, 10V
40mOhm @ 6.2A, 10V
3V @ 250µA
55 nC @ 10 V
±20V
2900 pF @ 30 V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
X4-DSN1006-3
DMP2043UCA3-7
MOSFET P-CH 20V 4.2A X2DSN1010-3
Diodes Incorporated
2,055
In Stock
865,000
Factory
1 : ¥3.45000
Cut Tape (CT)
5,000 : ¥1.10161
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
2.5V, 4.5V
45mOhm @ 1A, 4.5V
1.2V @ 250µA
1.9 nC @ 4.5 V
-20V
425 pF @ 10 V
-
650mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
X2-DSN1010-3
3-XFDFN
8-DFN
AON6312
MOSFET N-CHANNEL 30V 85A 8DFN
Alpha & Omega Semiconductor Inc.
1,113
In Stock
1 : ¥8.54000
Cut Tape (CT)
3,000 : ¥3.54267
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
85A (Tc)
4.5V, 10V
1.85mOhm @ 20A, 10V
2.2V @ 250µA
65 nC @ 10 V
±20V
3100 pF @ 15 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
564
In Stock
1 : ¥27.50000
Cut Tape (CT)
3,000 : ¥13.81836
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Tc)
4.5V, 10V
3.5mOhm @ 20A, 10V
2.8V @ 250µA
115 nC @ 10 V
±20V
5940 pF @ 50 V
-
6.2W (Ta), 215W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.