Single FETs, MOSFETs

Results: 4
Manufacturer
Rohm SemiconductorTexas Instruments
Series
-FemtoFET™NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)2.5A (Ta)3A (Ta)16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V1.8V, 8V4.5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 16A, 10V94mOhm @ 500mA, 8V121mOhm @ 500mA, 8V240mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id
1.1V @ 250µA1.2V @ 250µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.3 nC @ 4.5 V1.42 nC @ 4.5 V2.04 nC @ 8 V51 nC @ 10 V
Vgs (Max)
-12V12V±20V
Input Capacitance (Ciss) (Max) @ Vds
190 pF @ 15 V195 pF @ 15 V230 pF @ 10 V2550 pF @ 15 V
Power Dissipation (Max)
500mW (Ta)2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
3-PICOSTAR8-HSMT (3.2x3)
Package / Case
3-XFDFN8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
CSDxxxxF4T
CSD17484F4
MOSFET N-CH 30V 3A 3PICOSTAR
Texas Instruments
61,002
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71568
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3A (Ta)
1.8V, 8V
121mOhm @ 500mA, 8V
1.1V @ 250µA
2.04 nC @ 8 V
12V
195 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
CSDxxxxF4T
CSD17483F4
MOSFET N-CH 30V 1.5A 3PICOSTAR
Texas Instruments
100,731
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.64176
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.5A (Ta)
1.8V, 4.5V
240mOhm @ 500mA, 8V
1.1V @ 250µA
1.3 nC @ 4.5 V
12V
190 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
CSDxxxxF4T
CSD25484F4
MOSFET P-CH 20V 2.5A 3PICOSTAR
Texas Instruments
26,981
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.80472
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
1.8V, 8V
94mOhm @ 500mA, 8V
1.2V @ 250µA
1.42 nC @ 4.5 V
-12V
230 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
8-HSMT
RQ3E160ADTB
MOSFET N-CH 30V 16A 8HSMT
Rohm Semiconductor
17,974
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥2.00107
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
16A (Ta)
4.5V, 10V
4.5mOhm @ 16A, 10V
2.5V @ 1mA
51 nC @ 10 V
±20V
2550 pF @ 15 V
-
2W (Ta)
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.