Single FETs, MOSFETs

Results: 3
Manufacturer
onsemiRohm SemiconductorVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V50 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)3.2A (Tc)15A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
6.1mOhm @ 15A, 10V115mOhm @ 2.4A, 4.5V1.6Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
1.2V @ 250µA1.5V @ 250µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V5.5 nC @ 4.5 V15.3 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
58 pF @ 25 V330 pF @ 10 V850 pF @ 15 V
Power Dissipation (Max)
350mW (Ta)2W (Ta), 17W (Tc)2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-HSMT (3.2x3)SOT-23-3SOT-23-3 (TO-236)
Package / Case
8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS138K
MOSFET N-CH 50V 220MA SOT23-3
onsemi
119,878
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.50219
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
1.8V, 2.5V
1.6Ohm @ 50mA, 5V
1.2V @ 250µA
2.4 nC @ 10 V
±12V
58 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-HSMT
RQ3E150GNTB
MOSFET N-CH 30V 15A 8HSMT
Rohm Semiconductor
18,670
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.38540
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
15A (Ta), 39A (Tc)
4.5V, 10V
6.1mOhm @ 15A, 10V
2.5V @ 1mA
15.3 nC @ 10 V
±20V
850 pF @ 15 V
-
2W (Ta), 17W (Tc)
150°C (TJ)
-
-
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
SOT-23-3
SQ2351ES-T1_BE3
MOSFET P-CH 20V 3.2A SOT23-3
Vishay Siliconix
11,020
In Stock
1 : ¥4.76000
Cut Tape (CT)
3,000 : ¥1.59853
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
3.2A (Tc)
2.5V, 4.5V
115mOhm @ 2.4A, 4.5V
1.5V @ 250µA
5.5 nC @ 4.5 V
±12V
330 pF @ 10 V
-
2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.