Single FETs, MOSFETs

Results: 4
Manufacturer
Microchip TechnologyonsemiToshiba Semiconductor and Storage
Series
-U-MOSVIII-H
Packaging
BagCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
25 V30 V100 V240 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)270mA (Ta)540mA (Tj)11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V2.7V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
28mOhm @ 5.5A, 10V1.25Ohm @ 2A, 10V1.5Ohm @ 10mA, 4V4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id
1.06V @ 250µA1.5V @ 100µA2.5V @ 100µA3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V1.3 nC @ 5 V15 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V33 pF @ 5 V350 pF @ 25 V850 pF @ 10 V
Power Dissipation (Max)
330mW (Ta)350mW (Ta)1W (Tc)65W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)175°C
Mounting Type
Surface MountThrough Hole
Supplier Device Package
DPAK+SC-70-3 (SOT323)SOT-23-3TO-92-3
Package / Case
SC-70, SOT-323TO-226-3, TO-92-3 (TO-226AA)TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
286,402
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SC-70-3
NTS4001NT1G
MOSFET N-CH 30V 270MA SC70-3
onsemi
47,822
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥0.69154
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
270mA (Ta)
2.5V, 4V
1.5Ohm @ 10mA, 4V
1.5V @ 100µA
1.3 nC @ 5 V
±20V
33 pF @ 5 V
-
330mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
3,190
In Stock
1 : ¥10.67000
Cut Tape (CT)
2,000 : ¥2.88530
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
11A (Ta)
4.5V, 10V
28mOhm @ 5.5A, 10V
2.5V @ 100µA
15 nC @ 10 V
±20V
850 pF @ 10 V
-
65W (Tc)
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-92-3(StandardBody),TO-226_straightlead
VN2224N3-G
MOSFET N-CH 240V 540MA TO92-3
Microchip Technology
1,149
In Stock
1 : ¥33.99000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
240 V
540mA (Tj)
5V, 10V
1.25Ohm @ 2A, 10V
3V @ 5mA
-
±20V
350 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.