Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedToshiba Semiconductor and Storage
Series
-U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
50 V60 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 5V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 100mA, 10V2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
1V @ 250µA2.1V @ 250µA
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
37.1 pF @ 25 V40 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)520mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
SOT-23-3SSM
Package / Case
SC-75, SOT-416TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
110,324
In Stock
1 : ¥1.48000
Cut Tape (CT)
3,000 : ¥0.29446
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
-
150mW (Ta)
150°C
Surface Mount
SSM
SC-75, SOT-416
SOT-23-3
DMN53D0U-7
MOSFET N-CH 50V 300MA SOT23
Diodes Incorporated
100,954
In Stock
390,000
Factory
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.44806
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
300mA (Ta)
1.8V, 5V
2Ohm @ 50mA, 5V
1V @ 250µA
0.6 nC @ 4.5 V
±12V
37.1 pF @ 25 V
-
520mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.