Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
350mA (Ta)1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
100mOhm @ 1.2A, 10V1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250µA (Min)2.4V @ 250µA
Vgs (Max)
±6V±20V
Power Dissipation (Max)
150mW (Ta)420mW (Ta)
Supplier Device Package
SC-75ASOT-23-3 (TO-236)
Package / Case
SC-75, SOT-416TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
Pkg 5868
SI1013R-T1-GE3
MOSFET P-CH 20V 350MA SC75A
Vishay Siliconix
85,569
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.18637
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
20 V
350mA (Ta)
1.8V, 4.5V
1.2Ohm @ 350mA, 4.5V
450mV @ 250µA (Min)
1.5 nC @ 4.5 V
±6V
-
-
150mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-75A
SC-75, SOT-416
SOT 23-3
MGSF1N03LT1G
MOSFET N-CH 30V 1.6A SOT23-3
onsemi
24,308
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.27564
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.6A (Ta)
4.5V, 10V
100mOhm @ 1.2A, 10V
2.4V @ 250µA
-
±20V
140 pF @ 5 V
-
420mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.