Single FETs, MOSFETs

Results: 4
Manufacturer
onsemiSTMicroelectronicsTexas Instruments
Series
-NexFET™SuperMESH™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
30 V60 V600 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)500mA (Ta)6A (Tc)15A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V5V, 10V10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 17A, 8V1.2Ohm @ 3A, 10V5Ohm @ 200mA, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 250µA2.5V @ 250µA3V @ 1mA4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
6.6 nC @ 4.5 V46 nC @ 10 V
Vgs (Max)
+10V, -8V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V50 pF @ 25 V905 pF @ 25 V955 pF @ 15 V
Power Dissipation (Max)
200mW (Ta)830mW (Ta)2.7W (Ta)110W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-VSON-CLIP (3.3x3.3)D2PAKSOT-23-3TO-92-3
Package / Case
8-PowerTDFNTO-226-3, TO-92-3 (TO-226AA)TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002
MOSFET SOT23 N 60V 5OHM 150C
onsemi
89,959
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.98624
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-92-3(StandardBody),TO-226_straightlead
BS170
MOSFET N-CH 60V 500MA TO92-3
onsemi
44,450
In Stock
10,000
Factory
1 : ¥3.37000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
500mA (Ta)
10V
5Ohm @ 200mA, 10V
3V @ 1mA
-
±20V
40 pF @ 10 V
-
830mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
CSD1632x Series 8-SON
CSD17304Q3
MOSFET N-CH 30V 15A/56A 8VSON
Texas Instruments
5,723
In Stock
1 : ¥6.90000
Cut Tape (CT)
2,500 : ¥2.86572
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
15A (Ta), 56A (Tc)
3V, 8V
7.5mOhm @ 17A, 8V
1.8V @ 250µA
6.6 nC @ 4.5 V
+10V, -8V
955 pF @ 15 V
-
2.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
D²PAK
STB6NK60ZT4
MOSFET N-CH 600V 6A D2PAK
STMicroelectronics
28
In Stock
1 : ¥21.10000
Cut Tape (CT)
1,000 : ¥10.02992
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
6A (Tc)
10V
1.2Ohm @ 3A, 10V
4.5V @ 100µA
46 nC @ 10 V
±30V
905 pF @ 25 V
-
110W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.