Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI01P10-TP MOSFET P-CH 100V 1A SOT23 Micro Commercial Co	44,000 In Stock	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥0.90094 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	1A (Tj)	-	800mOhm @ 1A, 10V	3V @ 250µA	3.2 nC @ 10 V	±20V	388 pF @ 40 V	-	770mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SIR622DP-T1-RE3 MOSFET N-CH 150V 12.6A PPAK Vishay Siliconix	4,284 In Stock	1 : ¥12.31000 Cut Tape (CT) 3,000 : ¥5.09313 Tape & Reel (TR)	ThunderFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	12.6A (Ta), 51.6A (Tc)	7.5V, 10V	17.7mOhm @ 20A, 10V	4.5V @ 250µA	41 nC @ 10 V	±20V	1516 pF @ 75 V	-	6.25W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
EPC2306ENGRT TRANS GAN 100V .0038OHM3X5MM QFN EPC	5,417 In Stock	1 : ¥52.13000 Cut Tape (CT) 3,000 : ¥20.52378 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	48A (Ta)	5V	3.8mOhm @ 25A, 5V	2.5V @ 7mA	16.3 nC @ 5 V	+6V, -4V	2366 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	7-QFN (3x5)	7-PowerWQFN

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.