Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
-CoolMOS™ CE
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
500 V600 V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V13V
Rds On (Max) @ Id, Vgs
158mOhm @ 12A, 10V800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id
3.5V @ 130µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.4 nC @ 10 V95 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V2418 pF @ 100 V
Power Dissipation (Max)
60W (Tc)227W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO252-2TO-220AB
Package / Case
TO-220-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB
SIHP23N60E-GE3
MOSFET N-CH 600V 23A TO220AB
Vishay Siliconix
813
In Stock
1 : ¥17.98000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23A (Tc)
10V
158mOhm @ 12A, 10V
4V @ 250µA
95 nC @ 10 V
±30V
2418 pF @ 100 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
0
In Stock
1 : ¥6.08000
Cut Tape (CT)
2,500 : ¥2.31828
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
500 V
7.6A (Tc)
13V
800mOhm @ 1.5A, 13V
3.5V @ 130µA
12.4 nC @ 10 V
±20V
280 pF @ 100 V
-
60W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-2
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.