Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V150 V
Current - Continuous Drain (Id) @ 25°C
3.8A (Ta)4.4A (Ta)
Rds On (Max) @ Id, Vgs
56mOhm @ 4.4A, 10V65mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 4.5 V21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
563 pF @ 25 V1335 pF @ 75 V
Power Dissipation (Max)
1.08W (Ta)2.5W (Ta), 50W (Tc)
Supplier Device Package
8-PQFN (5x6)SOT-23-3
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP3099L-7
MOSFET P-CH 30V 3.8A SOT23
Diodes Incorporated
289,607
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.49040
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.8A (Ta)
4.5V, 10V
65mOhm @ 3.8A, 10V
2.1V @ 250µA
5.2 nC @ 4.5 V
±20V
563 pF @ 25 V
-
1.08W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-PQFN
FDMS86252L
MOSFET N-CH 150V 4.4A 8PQFN
onsemi
7,405
In Stock
36,000
Factory
1 : ¥16.67000
Cut Tape (CT)
3,000 : ¥7.51575
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
4.4A (Ta)
4.5V, 10V
56mOhm @ 4.4A, 10V
3V @ 250µA
21 nC @ 10 V
±20V
1335 pF @ 75 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.