Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
900 V1200 V
Current - Continuous Drain (Id) @ 25°C
9.8A (Ta), 112A (Tc)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V20V
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 15V56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id
4.3V @ 10mA4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 20 V200 nC @ 15 V
Vgs (Max)
+19V, -10V+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
1789 pF @ 800 V4415 pF @ 450 V
Power Dissipation (Max)
3.7W (Ta), 477W (Tc)357W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
D2PAK-7
NTBG020N090SC1
SICFET N-CH 900V 9.8A/112A D2PAK
onsemi
1,001
In Stock
1 : ¥159.27000
Cut Tape (CT)
800 : ¥145.29301
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
900 V
9.8A (Ta), 112A (Tc)
15V
28mOhm @ 60A, 15V
4.3V @ 20mA
200 nC @ 15 V
+19V, -10V
4415 pF @ 450 V
-
3.7W (Ta), 477W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
D2PAK-7
NTBG040N120SC1
SICFET N-CH 1200V 60A D2PAK-7
onsemi
993
In Stock
20,000
Factory
1 : ¥183.74000
Cut Tape (CT)
800 : ¥106.18459
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
20V
56mOhm @ 35A, 20V
4.3V @ 10mA
106 nC @ 20 V
+25V, -15V
1789 pF @ 800 V
-
357W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.