Single FETs, MOSFETs

Results: 17
Manufacturer
Infineon TechnologiesonsemiRohm SemiconductorWolfspeed, Inc.
Series
-C3M™OptiMOS™ 6
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
100 V650 V750 V900 V1200 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)23A (Ta), 192A (Tc)37A (Tc)42A (Tc)47A (Tc)49A (Tc)56A (Tc)73A (Tc)77A (Tc)97A (Tc)105A (Tc)115A (Tc)120A (Tc)142A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V15V15V, 18V18V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 50A, 10V16.9mOhm @ 58A, 18V18mOhm @ 75A, 18V21mOhm @ 55.8A, 15V22.3mOhm @ 75A, 15V34mOhm @ 29A, 18V34mOhm @ 33.5A, 15V39mOhm @ 35A, 15V60mOhm @ 17.6A, 15V79mOhm @ 13.2A, 15V157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id
3.3V @ 116µA3.5V @ 11mA3.6V @ 1.86mA3.6V @ 15.5mA3.6V @ 23mA3.6V @ 4.84mA3.6V @ 5mA3.6V @ 9.22mA3.8V @ 4.84mA4.3V @ 25mA4.8V @ 15.4mA4.8V @ 30.8mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 15 V46 nC @ 15 V61 nC @ 15 V63 nC @ 15 V65 nC @ 15 V72.5 nC @ 10 V74 nC @ 15 V94 nC @ 18 V108 nC @ 15 V111 nC @ 15 V170 nC @ 18 V188 nC @ 15 V211 nC @ 15 V283 nC @ 18 V
Vgs (Max)
-8V, +19V+15V, -4V+19V, -8V±20V+21V, -4V+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
640 pF @ 400 V1020 pF @ 600 V1503 pF @ 600 V1606 pF @ 500 V1621 pF @ 400 V1621 pF @ 600 V2320 pF @ 500 V2970 pF @ 400 V2980 pF @ 600 V4580 pF @ 500 V4790 pF @ 325 V5011 pF @ 400 V5500 pF @ 50 V6085 pF @ 1000 V
Power Dissipation (Max)
3W (Ta), 217W (Tc)98W (Tc)139W (Tc)147W (Tc)150W (Tc)176W176W (Tc)240W (Tc)312W326W (Tc)416W (Tc)500W (Tc)556W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TDSON-8 FLTO-247-3TO-247-4LTO-263-7TOLL
Package / Case
8-PowerSFN8-PowerTDFNTO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
17Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
9,422
In Stock
1 : ¥29.23000
Cut Tape (CT)
5,000 : ¥13.63340
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
23A (Ta), 192A (Tc)
8V, 10V
2.7mOhm @ 50A, 10V
3.3V @ 116µA
72.5 nC @ 10 V
±20V
5500 pF @ 50 V
-
3W (Ta), 217W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
TO-247-4
NTH4L015N065SC1
SILICON CARBIDE MOSFET, NCHANNEL
onsemi
130
In Stock
1 : ¥223.06000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
142A (Tc)
15V, 18V
18mOhm @ 75A, 18V
4.3V @ 25mA
283 nC @ 18 V
+22V, -8V
4790 pF @ 325 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0015065D
SICFET N-CH 650V 120A TO247-3
Wolfspeed, Inc.
708
In Stock
1 : ¥293.83000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
120A (Tc)
15V
21mOhm @ 55.8A, 15V
3.6V @ 15.5mA
188 nC @ 15 V
+15V, -4V
5011 pF @ 400 V
-
416W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
SCT4026DRHRC15
SCT4013DRC15
750V, 13M, 4-PIN THD, TRENCH-STR
Rohm Semiconductor
402
In Stock
1 : ¥331.92000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
105A (Tc)
18V
16.9mOhm @ 58A, 18V
4.8V @ 30.8mA
170 nC @ 18 V
+21V, -4V
4580 pF @ 500 V
-
312W
175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0030090K
SICFET N-CH 900V 73A TO247-4
Wolfspeed, Inc.
2,709
In Stock
1 : ¥391.85000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
900 V
73A (Tc)
15V
39mOhm @ 35A, 15V
3.5V @ 11mA
74 nC @ 15 V
+15V, -4V
1503 pF @ 600 V
-
240W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0015065K
SICFET N-CH 650V 120A TO247-4L
Wolfspeed, Inc.
848
In Stock
1 : ¥417.96000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
120A (Tc)
15V
21mOhm @ 55.8A, 15V
3.6V @ 15.5mA
188 nC @ 15 V
+15V, -4V
5011 pF @ 400 V
-
416W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0016120K
SICFET N-CH 1.2KV 115A TO247-4
Wolfspeed, Inc.
257
In Stock
1 : ¥748.41000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
115A (Tc)
15V
22.3mOhm @ 75A, 15V
3.6V @ 23mA
211 nC @ 15 V
+15V, -4V
6085 pF @ 1000 V
-
556W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0120065K
650V 120M SIC MOSFET
Wolfspeed, Inc.
580
In Stock
1 : ¥90.72000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0120065D
650V 120M SIC MOSFET
Wolfspeed, Inc.
425
In Stock
1 : ¥90.72000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0060065D
SICFET N-CH 650V 37A TO247-3
Wolfspeed, Inc.
697
In Stock
1 : ¥95.56000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
37A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 5mA
46 nC @ 15 V
+15V, -4V
1020 pF @ 600 V
-
150W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065090J
C3M0045065J1
650V 45 M SIC MOSFET
Wolfspeed, Inc.
2,447
In Stock
1 : ¥113.62000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
47A (Tc)
15V
60mOhm @ 17.6A, 15V
3.6V @ 4.84mA
61 nC @ 15 V
+19V, -8V
1621 pF @ 400 V
-
147W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C2D10120D
C3M0045065D
GEN 3 650V 45 M SIC MOSFET
Wolfspeed, Inc.
459
In Stock
1 : ¥161.57000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
49A (Tc)
15V
60mOhm @ 17.6A, 15V
3.6V @ 4.84mA
63 nC @ 15 V
+19V, -8V
1621 pF @ 600 V
-
176W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065100K
C3M0045065K
GEN 3 650V 49A SIC MOSFET
Wolfspeed, Inc.
411
In Stock
1 : ¥161.57000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
49A (Tc)
15V
60mOhm @ 17.6A, 15V
3.6V @ 4.84mA
63 nC @ 15 V
+19V, -8V
1621 pF @ 600 V
-
176W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
SCT4026DRHRC15
SCT4026DRC15
750V, 26M, 4-PIN THD, TRENCH-STR
Rohm Semiconductor
3,821
In Stock
1 : ¥174.54000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
56A (Tc)
18V
34mOhm @ 29A, 18V
4.8V @ 15.4mA
94 nC @ 18 V
+21V, -4V
2320 pF @ 500 V
-
176W
175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0025065D
GEN 3 650V 25 M SIC MOSFET
Wolfspeed, Inc.
1,548
In Stock
1 : ¥255.16000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
97A (Tc)
15V
34mOhm @ 33.5A, 15V
3.6V @ 9.22mA
108 nC @ 15 V
+19V, -8V
2980 pF @ 600 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0025075K1
C3M0045075K1
SICFET N-CH 750V 42A TO247
Wolfspeed, Inc.
262
In Stock
1 : ¥96.30000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
42A (Tc)
15V
60mOhm @ 17.6A, 15V
3.8V @ 4.84mA
65 nC @ 15 V
-8V, +19V
1606 pF @ 500 V
-
139W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0025065L-TR
C3M0025065L-TR
SIC, MOSFET, 25M, 650V, TOLL, T&
Wolfspeed, Inc.
1,845
In Stock
1 : ¥262.80000
Cut Tape (CT)
2,000 : ¥168.50624
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
77A (Tc)
15V
34mOhm @ 33.5A, 15V
3.6V @ 9.22mA
111 nC @ 15 V
-8V, +19V
2970 pF @ 400 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
Showing
of 17

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.