Single FETs, MOSFETs

Results: 3
Drain to Source Voltage (Vdss)
1050 V1200 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Tc)6A (Tc)12A (Tc)
Rds On (Max) @ Id, Vgs
690mOhm @ 6A, 10V1.3Ohm @ 3A, 10V8Ohm @ 750mA, 10V
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V21.5 nC @ 10 V44.2 nC @ 10 V
Vgs (Max)
±30V30V
Input Capacitance (Ciss) (Max) @ Vds
115 pF @ 100 V545 pF @ 100 V1370 pF @ 100 V
Power Dissipation (Max)
40W (Tc)60W (Tc)130W (Tc)
Supplier Device Package
TO-220TO-220FPTO-251 (IPAK)
Package / Case
TO-220-3TO-220-3 Full PackTO-251-3 Short Leads, IPAK, TO-251AA
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Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-F
STF12N120K5
MOSFET N-CH 1200V 12A TO220FP
STMicroelectronics
590
In Stock
1 : ¥98.44000
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MOSFET (Metal Oxide)
1200 V
12A (Tc)
10V
690mOhm @ 6A, 10V
5V @ 100µA
44.2 nC @ 10 V
±30V
1370 pF @ 100 V
-
40W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
I-Pak
STU2N105K5
MOSFET N-CH 1050V 1.5A IPAK
STMicroelectronics
7,717
In Stock
1 : ¥14.04000
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N-Channel
MOSFET (Metal Oxide)
1050 V
1.5A (Tc)
10V
8Ohm @ 750mA, 10V
5V @ 100µA
10 nC @ 10 V
±30V
115 pF @ 100 V
-
60W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Short Leads, IPAK, TO-251AA
TO-220-3
STP10N105K5
MOSFET N-CH 1050V 6A TO220
STMicroelectronics
919
In Stock
1 : ¥28.32000
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N-Channel
MOSFET (Metal Oxide)
1050 V
6A (Tc)
10V
1.3Ohm @ 3A, 10V
5V @ 100µA
21.5 nC @ 10 V
30V
545 pF @ 100 V
-
130W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.