Single FETs, MOSFETs

Results: 3
Manufacturer
EPCInfineon TechnologiesRohm Semiconductor
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V100 V200 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta), 40A (Tc)14A (Ta)22A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V6V, 10V
Rds On (Max) @ Id, Vgs
4.1mOhm @ 22A, 10V9.7mOhm @ 20A, 10V22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2mA3.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs
5.9 nC @ 5 V28 nC @ 10 V130 nC @ 10 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 100 V2080 pF @ 50 V5850 pF @ 15 V
Power Dissipation (Max)
2.1W (Ta), 69W (Tc)3W (Ta)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-HSOPDiePG-TSDSON-8-FL
Package / Case
8-PowerTDFNDie
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TSDSON-8
BSZ097N10NS5ATMA1
MOSFET N-CH 100V 8A/40A TSDSON
Infineon Technologies
11,361
In Stock
1 : ¥12.89000
Cut Tape (CT)
5,000 : ¥5.07049
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8A (Ta), 40A (Tc)
6V, 10V
9.7mOhm @ 20A, 10V
3.8V @ 36µA
28 nC @ 10 V
±20V
2080 pF @ 50 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
HSOP8
RS1E220ATTB1
MOSFET P-CH 30V 22A/76A 8HSOP
Rohm Semiconductor
8,161
In Stock
1 : ¥21.67000
Cut Tape (CT)
2,500 : ¥9.77066
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta), 76A (Tc)
4.5V, 10V
4.1mOhm @ 22A, 10V
2.5V @ 2mA
130 nC @ 10 V
±20V
5850 pF @ 15 V
-
3W (Ta)
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
EPC22xx
EPC2207
TRANS GAN 200V DIE .022OHM
EPC
17,306
In Stock
1 : ¥28.16000
Cut Tape (CT)
2,500 : ¥8.95484
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
14A (Ta)
5V
22mOhm @ 14A, 5V
2.5V @ 2mA
5.9 nC @ 5 V
+6V, -4V
600 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.