Single Bipolar Transistors

Results: 7
Manufacturer
Diodes Incorporatedonsemi
Packaging
BulkCut Tape (CT)Tape & Box (TB)Tube
Transistor Type
NPNNPN - DarlingtonPNP
Current - Collector (Ic) (Max)
500 mA1 A4 A5 A10 A
Voltage - Collector Emitter Breakdown (Max)
30 V60 V80 V120 V150 V300 V
Vce Saturation (Max) @ Ib, Ic
220mV @ 200mA, 5A260mV @ 400mA, 4A500mV @ 2mA, 20mA500mV @ 50mA, 500mA1.5V @ 1mA, 1A2.5V @ 6mA, 3A8V @ 3.3A, 10A
Current - Collector Cutoff (Max)
50nA (ICBO)100nA (ICBO)10µA500µA700µA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A, 4V40 @ 150mA, 2V40 @ 30mA, 10V100 @ 1A, 1V100 @ 1A, 5V750 @ 3A, 3V2000 @ 1A, 5V
Power - Max
625 mW1 W1.2 W70 W75 W
Frequency - Transition
2MHz50MHz90MHz100MHz150MHz-
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 200°C (TJ)150°C (TJ)
Package / Case
E-Line-3TO-220-3TO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
E-Line (TO-92 compatible)TO-220TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3 Formed Leads
BC638TA
TRANS PNP 60V 1A TO92-3
onsemi
7,614
In Stock
1 : ¥3.20000
Cut Tape (CT)
2,000 : ¥0.57440
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
PNP
1 A
60 V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1 W
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
MPSA42
TRANS NPN 300V 0.5A TO92-3
onsemi
13,342
In Stock
10,000
Factory
1 : ¥3.37000
Bulk
-
Bulk
Active
NPN
500 mA
300 V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
625 mW
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
ZTX605
TRANS NPN DARL 120V 1A E-LINE
Diodes Incorporated
8,626
In Stock
4,000
Factory
1 : ¥7.22000
Bulk
-
Bulk
Active
NPN - Darlington
1 A
120 V
1.5V @ 1mA, 1A
10µA
2000 @ 1A, 5V
1 W
150MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
TO-220-3
MJE3055TG
TRANS NPN 60V 10A TO220
onsemi
11,227
In Stock
1 : ¥7.39000
Tube
-
Tube
Active
NPN
10 A
60 V
8V @ 3.3A, 10A
700µA
20 @ 4A, 4V
75 W
2MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
BDX33BG
TRANS NPN DARL 80V 10A TO220
onsemi
306
In Stock
1,000
Factory
1 : ¥8.29000
Tube
-
Tube
Active
NPN - Darlington
10 A
80 V
2.5V @ 6mA, 3A
500µA
750 @ 3A, 3V
70 W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-92-3(StandardBody),TO-226_straightlead
ZTX849
TRANS NPN 30V 5A E-LINE
Diodes Incorporated
4,132
In Stock
4,000
Factory
1 : ¥8.46000
Bulk
-
Bulk
Active
NPN
5 A
30 V
220mV @ 200mA, 5A
50nA (ICBO)
100 @ 1A, 1V
1.2 W
100MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
TO-92-3(StandardBody),TO-226_straightlead
ZTX855
TRANS NPN 150V 4A E-LINE
Diodes Incorporated
3,790
In Stock
4,000
Factory
1 : ¥8.46000
Bulk
-
Bulk
Active
NPN
4 A
150 V
260mV @ 400mA, 4A
50nA (ICBO)
100 @ 1A, 5V
1.2 W
90MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
Showing
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.