Single FETs, MOSFETs

Results: 6
Manufacturer
Infineon TechnologiesLittelfuse Inc.onsemiTexas Instruments
Series
HEXFET®NexFET™PowerTrench®TrenchT2™
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
55 V60 V75 V100 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 80A (Tc)14A (Ta), 80A (Tc)72A (Ta), 100A (Tc)75A (Tc)120A (Tc)169A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
5.3mOhm @ 101A, 10V6mOhm @ 80A, 10V6.3mOhm @ 75A, 10V6.5mOhm @ 66A, 10V7.7mOhm @ 60A, 10V9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V78 nC @ 10 V110 nC @ 10 V145 nC @ 10 V260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3025 pF @ 30 V3450 pF @ 25 V4740 pF @ 25 V5480 pF @ 25 V6000 pF @ 25 V9160 pF @ 15 V
Power Dissipation (Max)
170W (Tc)192W (Tc)242W (Tc)250W (Tc)310W (Tc)330W (Tc)
Supplier Device Package
TO-220-3TO-220AB
Stocking Options
Environmental Options
Media
Marketplace Product
6Results
Showing
of 6
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
FDP3632
MOSFET N-CH 100V 12A/80A TO220-3
onsemi
677
In Stock
1 : ¥28.32000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
12A (Ta), 80A (Tc)
6V, 10V
9mOhm @ 80A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
6000 pF @ 25 V
-
310W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220-3
CSD18533KCS
MOSFET N-CH 60V 72A/100A TO220-3
Texas Instruments
1,321
In Stock
1 : ¥12.48000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
72A (Ta), 100A (Tc)
4.5V, 10V
6.3mOhm @ 75A, 10V
2.3V @ 250µA
34 nC @ 10 V
±20V
3025 pF @ 30 V
-
192W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220AB PKG
IRF3205ZPBF
MOSFET N-CH 55V 75A TO220AB
Infineon Technologies
4,426
In Stock
1 : ¥13.96000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
75A (Tc)
10V
6.5mOhm @ 66A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
3450 pF @ 25 V
-
170W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRF1405PBF
MOSFET N-CH 55V 169A TO220AB
Infineon Technologies
13,015
In Stock
1 : ¥14.61000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
169A (Tc)
10V
5.3mOhm @ 101A, 10V
4V @ 250µA
260 nC @ 10 V
±20V
5480 pF @ 25 V
-
330W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
FDP5800
MOSFET N-CH 60V 14A/80A TO220-3
onsemi
96
In Stock
1 : ¥20.69000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
14A (Ta), 80A (Tc)
4.5V, 10V
6mOhm @ 80A, 10V
2.5V @ 250µA
145 nC @ 10 V
±20V
9160 pF @ 15 V
-
242W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220-3
IXTP120N075T2
MOSFET N-CH 75V 120A TO220AB
Littelfuse Inc.
42
In Stock
1,350
Factory
1 : ¥21.43000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
120A (Tc)
10V
7.7mOhm @ 60A, 10V
4V @ 250µA
78 nC @ 10 V
±20V
4740 pF @ 25 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
Showing
of 6

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.