Single FETs, MOSFETs

Results: 3
Manufacturer
EPCInfineon TechnologiesWolfspeed, Inc.
Series
C3M™eGaN®HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
20 V60 V1200 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)30A (Tc)90A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V5V15V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 31A, 5V57mOhm @ 2.3A, 2.5V90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
750mV @ 11µA2.5V @ 16mA4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
1.7 nC @ 2.5 V16 nC @ 5 V54 nC @ 15 V
Vgs (Max)
+6V, -4V±8V+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds
529 pF @ 10 V1350 pF @ 1000 V1780 pF @ 30 V
Power Dissipation (Max)
500mW (Ta)113.6W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
DiePG-SOT23TO-247-3
Package / Case
DieTO-236-3, SC-59, SOT-23-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
eGaN Series
EPC2020
GANFET N-CH 60V 90A DIE
EPC
2,789
In Stock
1 : ¥67.48000
Cut Tape (CT)
500 : ¥42.53746
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
60 V
90A (Ta)
5V
2.2mOhm @ 31A, 5V
2.5V @ 16mA
16 nC @ 5 V
+6V, -4V
1780 pF @ 30 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
C2D10120D
C3M0075120D
SICFET N-CH 1200V 30A TO247-3
Wolfspeed, Inc.
835
In Stock
1 : ¥161.57000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
54 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
SOT-23-3
BSS806NEH6327XTSA1
MOSFET N-CH 20V 2.3A SOT23-3
Infineon Technologies
64,061
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71245
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.3A (Ta)
1.8V, 2.5V
57mOhm @ 2.3A, 2.5V
750mV @ 11µA
1.7 nC @ 2.5 V
±8V
529 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.