Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
HEXFET®U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
56mOhm @ 3.6A, 10V93mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA2.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
3.9 nC @ 4.5 V4.6 nC @ 4.5 V
Vgs (Max)
+6V, -8V±16V
Input Capacitance (Ciss) (Max) @ Vds
266 pF @ 25 V290 pF @ 10 V
Power Dissipation (Max)
1W (Ta)1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
Micro3™/SOT-23SOT-23F
Package / Case
SOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML0040TRPBF
MOSFET N-CH 40V 3.6A SOT23
Infineon Technologies
41,908
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.06410
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
3.6A (Ta)
4.5V, 10V
56mOhm @ 3.6A, 10V
2.5V @ 25µA
3.9 nC @ 4.5 V
±16V
266 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
4,473
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.56046
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.9A (Ta)
1.5V, 4.5V
93mOhm @ 1.5A, 4.5V
1V @ 1mA
4.6 nC @ 4.5 V
+6V, -8V
290 pF @ 10 V
-
1W (Ta)
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.