Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DN3525N8-G MOSFET N-CH 250V 360MA TO243AA Microchip Technology	9,151 In Stock	1 : ¥7.22000 Cut Tape (CT) 2,000 : ¥5.33642 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	250 V	360mA (Tj)	0V	6Ohm @ 200mA, 0V	-	-	±20V	350 pF @ 25 V	Depletion Mode	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
IXTY08N50D2 MOSFET N-CH 500V 800MA TO252 Littelfuse Inc.	7,683 In Stock	1 : ¥23.56000 Tube	Depletion	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	800mA (Tc)	-	4.6Ohm @ 400mA, 0V	-	12.7 nC @ 5 V	±20V	312 pF @ 25 V	Depletion Mode	60W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSS126IXTSA1 MOSFET N-CH 600V 21MA SOT23-3 Infineon Technologies	4,025 In Stock	1 : ¥3.45000 Cut Tape (CT) 3,000 : ¥0.94082 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21mA (Ta)	-	500Ohm @ 16mA, 10V	2.7V @ 8µA	1.4 nC @ 5 V	±20V	21 pF @ 25 V	Depletion Mode	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3-5	TO-236-3, SC-59, SOT-23-3
CPC3902ZTR MOSFET N-CH 250V SOT223 Littelfuse Inc.	820 In Stock 49,000 Factory	1 : ¥7.31000 Cut Tape (CT) 1,000 : ¥3.22342 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	250 V	-	0V	2.5Ohm @ 300mA, 0V	-	-	±15V	230 pF @ 20 V	Depletion Mode	1.8W (Tc)	-55°C ~ 110°C (TA)	Surface Mount	SOT-223	TO-261-4, TO-261AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.