Single FETs, MOSFETs

Results: 2
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
270mA (Ta)6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4V
Rds On (Max) @ Id, Vgs
18mOhm @ 6.8A, 4.5V1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
1.3 nC @ 5 V11.05 nC @ 4.5 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
33 pF @ 5 V888 pF @ 10 V
Power Dissipation (Max)
330mW (Ta)1.2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SC-70-3 (SOT323)SOT-23
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SC-70-3
NTS4001NT1G
MOSFET N-CH 30V 270MA SC70-3
onsemi
48,936
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥0.69154
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
270mA (Ta)
2.5V, 4V
1.5Ohm @ 10mA, 4V
1.5V @ 100µA
1.3 nC @ 5 V
±20V
33 pF @ 5 V
-
330mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
AS2312
AS2312
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
2,708
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37565
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
6.8A (Ta)
1.8V, 4.5V
18mOhm @ 6.8A, 4.5V
1V @ 250µA
11.05 nC @ 4.5 V
±10V
888 pF @ 10 V
-
1.2W (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.