Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesLittelfuse Inc.
Series
HiPerFET™, Q ClassOptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
100 V500 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 100A (Tc)34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 50A, 10V120mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
3.8V @ 146µA4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
111 nC @ 10 V190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7000 pF @ 25 V8200 pF @ 50 V
Power Dissipation (Max)
3W (Ta), 214W (Tc)310W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
ISOPLUS247™PG-TSON-8-3
Package / Case
8-PowerTDFNTO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TSON-8-3
BSC027N10NS5ATMA1
MOSFET N-CH 100V 23A/100A TSON
Infineon Technologies
7,012
In Stock
1 : ¥37.44000
Cut Tape (CT)
5,000 : ¥17.46636
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
23A (Ta), 100A (Tc)
6V, 10V
2.7mOhm @ 50A, 10V
3.8V @ 146µA
111 nC @ 10 V
±20V
8200 pF @ 50 V
-
3W (Ta), 214W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSON-8-3
8-PowerTDFN
TO-247-ISOPLUS-EP-(R)
IXFR44N50Q
MOSFET N-CH 500V 34A ISOPLUS247
Littelfuse Inc.
0
In Stock
330
Factory
Check Lead Time
300 : ¥141.38543
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
34A (Tc)
10V
120mOhm @ 22A, 10V
4V @ 4mA
190 nC @ 10 V
±20V
7000 pF @ 25 V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247™
TO-247-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.