Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
HEXFET®U-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
11.4mOhm @ 13A, 10V63mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 10µA2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 4.5 V17 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 24 V1625 pF @ 30 V
Power Dissipation (Max)
610mW (Ta), 61W (Tc)1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)175°C
Supplier Device Package
8-TSON Advance (3.1x3.1)Micro3™/SOT-23
Package / Case
8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML6346TRPBF
MOSFET N-CH 30V 3.4A SOT23
Infineon Technologies
69,431
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83414
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.4A (Ta)
2.5V, 4.5V
63mOhm @ 3.4A, 4.5V
1.1V @ 10µA
2.9 nC @ 4.5 V
±12V
270 pF @ 24 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
33,932
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.85733
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
26A (Tc)
4.5V, 10V
11.4mOhm @ 13A, 10V
2.5V @ 200µA
17 nC @ 10 V
±20V
1625 pF @ 30 V
-
610mW (Ta), 61W (Tc)
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.